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LMUN2237LT1 Datasheet(PDF) 2 Page - Leshan Radio Company

Part No. LMUN2237LT1
Description  Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  LRC [Leshan Radio Company]
Homepage  http://www.lrc.cn/
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LMUN2237LT1 Datasheet(HTML) 2 Page - Leshan Radio Company

   
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DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
LMUN2237LT1
SOT-23
47
22
3. New devices. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 40 V, IE = 0)
ICBO
50
nAdc
Collector-Emitter Cutoff Current (VCE = 40 V, IB = 0)
ICEO
50
nAdc
Emitter-Base Cutoff Current
(VBE = 6.0 V, IC = 0)
IEBO
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
80
140
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA)
VCE(sat)
0.25
Vdc
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
VOL
0.2
Vdc
4. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
Output Voltage (on)
Input Resistor
R1
k
Resistor Ratio
R1/R2
1.7
2.1
2.6
Figure 1. Derating Curve
350
200
150
100
50
0
–50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
RθJA = 370°C/W
250
A8P
32.9
47
61.1
LESHAN RADIO COMPANY, LTD.
LMUN2237LT1
LMUN2237LT1-2/4


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