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L8550LT1 Datasheet(PDF) 1 Page - Leshan Radio Company

Part No. L8550LT1
Description  General Purpose Transistors PNP Silicon
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Manufacturer  LRC [Leshan Radio Company]
Direct Link  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

L8550LT1 Datasheet(HTML) 1 Page - Leshan Radio Company

  L8550LT1 Datasheet HTML 1Page - Leshan Radio Company L8550LT1 Datasheet HTML 2Page - Leshan Radio Company L8550LT1 Datasheet HTML 3Page - Leshan Radio Company  
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LESHAN RADIO COMPANY, LTD.
L8550*LT1–1/3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V CEO
25
V
Collector-Base voltage
V CBO
40
V
Emitter-base Voltage
V EBO
5
V
Collector current-continuoun
I C
800
mAdc
THERMALCHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board (1)
P D
T A = 2
5 °C
225
mW
Derate above 2
5 °C
1.8
mW /°C
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Total Device Dissipation
P D
Alumina Substrate, (2) T A = 2
5 °C
300
mW
Derate above 2
5 °C
2.4
mW /°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature
T J , T stg
-55 to +150
°C
DEVICEMARKING
L8550QLT1 = 1YD L8550PLT1=85P
ELECTRICAL CHARACTERISTICS (T A = 2
5 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFFCHARACTERISTICS
Collector-Emitter Breakdown Voltage
V (BR)CEO
25
V
(I C = 1.0mA)
Emitter-Base Breakdown Voltage
V (BR)EBO
5–
V
(I E = 100
µA)
Collector-Base Breakdown voltage
V (BR)CBO
40
V
(I C= 100
µA)
Collector Cutoff Current
I CBO
150
nA
(VCB = 35 V)
Emitter Cutoff Current
I EBO
150
nA
(VEB =4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT– 23
L8550*LT1
1
3
2
General Purpose Transistors
1
BASE
2
EMITTER
COLLECTOR
3
FEATURE
Pb-Free Package is available.
ORDERING INFORMATION
Device
Package
Shipping
L8550*LT1
SOT-23
3000/Tape&Reel
L8550*LT1G
(Pb-Free)
SOT-23
3000/Tape&Reel
PNP Silicon


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