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LMUN2135LT1 Datasheet(PDF) 2 Page - Leshan Radio Company

Part No. LMUN2135LT1
Description  Bias Resistor Transistors, PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  LRC [Leshan Radio Company]
Homepage  http://www.lrc.cn/
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LMUN2135LT1 Datasheet(HTML) 2 Page - Leshan Radio Company

   
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LESHAN RADIO COMPANY, LTD.
LMUN2135LT1-2/4
LMUN2135LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter-Base Cutoff Current
(VBE = 6.0 V)
IEBO
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
80
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA)
VCE(sat)
0.25
Vdc
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
VOL
0.2
Vdc
3. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
Output Voltage (on)
1.54
2.2
2.86
Resistor Ratio
R1/R2
0.038
0.047
0.056
Input Resistor
R 1
k
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
Output Voltage (off)
VOH
––
Vdc
4.9


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