LESHAN RADIO COMPANY, LTD.

LMBT3904/6WT1-1/11

1

3

2

NPN

LMBT3904WT1

PNP

LMBT3906WT1

CASE 419–02, STYLE 3

SOT– 323 / SC–70

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

LMBT3904WT1

40

Vdc

LMBT3906WT1

– 40

Collector–Base Voltage

LMBT3904WT1

60

Vdc

LMBT3906WT1

– 40

Emitter–Base Voltage

LMBT3904WT1

6.0

Vdc

LMBT3906WT1

– 5.0

Collector Current — Continuous

LMBT3904WT1

200

mAdc

LMBT3906WT1

– 200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (1)

150

mW

Thermal Resistance, Junction to Ambient

833

°C/W

Junction and Storage Temperature

–55 to +150

°C

General Purpose Transistors

NPN and PNP Silicon

These transistors are designed for general purpose amplifier applications. They are housed

in the SOT–323/SC–70 which is designed for low power surface mount applications.

GENERAL PURPOSE

AMPLIFIER TRANSISTORS

SURFACE MOUNT

Pb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Package

Shipping

LMBT3904WT1

AM

SOT-323/SC-70

3000/Tape&Reel

LMBT3904WT1G

AM

(Pb-Free)

SOT-323/SC-70

3000/Tape&Reel

LMBT3906WT1

2A

SOT-323/SC-70

3000/Tape&Reel

LMBT3906WT1G

2A

(Pb-Free)

SOT-323/SC-70

3000/Tape&Reel

2

EMITTER

3

COLLECTOR

1

BASE

2

EMITTER

3

COLLECT OR

1

BASE

LMBT3904WT1

LMBT3906WT1