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AN79L00 Datasheet(PDF) 4 Page - Panasonic Semiconductor

Part No. AN79L00
Description  3-pin Negative Output Voltage Regulator 100mA Type
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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AN79L00 Datasheet(HTML) 4 Page - Panasonic Semiconductor

   
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Parameter
Symbol
Condition
min
typ
max
Output voltage
VO
–7.28
V
–7
Output voltage tolerance
VO
V
Line regulation
REGIN
140
mV
mV
Load regulation
REGL
mV
13
mV
mA
3
Bias current
IBias
mA
Input bias current fluctuation
mA
Load bias current fluctuation
48
Output noise voltage
Vno
dB
0.5
0.1
70
–7.35
70
40
5
54
–6.72
–6.65
Ripple rejection ratio
RR
V
0.8
Minimum input/output voltage difference
mA
200
Output short circuit current
– 0.5
6
Output voltage temperature coefficient
Unit
VI=–10 to –22V, IO=1 to 70mA
VI=–9 to –23V, Tj=25˚C
IO=1 to 100mA, Tj=25˚C
IO=1 to 40mA, Tj=25˚C
VI=–10 to –20V, Tj=25˚C
VI=–10 to –22V, Tj=25˚C
IO=1 to 40mA, Tj=25˚C
f=10Hz to 100kHz, Ta=25˚C
VI=–10 to –20V, f=120Hz, Ta=25˚C
Tj=25˚C
IO (Short)
VI=–35V, Tj=25˚C
IO=5mA
Tj=25˚C
µV
Tj=25˚C
∆I
bias (IN)
∆I
bias (L)
VDIF (min.)
mV/˚C
∆V
O/Ta
Note 1) The specified condition Tj=25˚C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, VI=–9V, IO=40mA, CI=2
µF, C
O=1
µF, T
j=0 to 125˚C (AN79L04)
and Tj=0 to 100˚C (AN79L04)
s Electrical Characteristics (Ta=25˚C)
· AN79L07/AN79L07M (–7V Type)
Parameter
Symbol
Condition
min
typ
max
Output voltage
VO
–8.32
V
–8
Output voltage tolerance
VO
V
Line regulation
REGIN
160
mV
mV
Load regulation
REGL
mV
15
mV
mA
3
Bias current
IBias
mA
Input bias current fluctuation
mA
Load bias current fluctuation
52
Output noise voltage
Vno
dB
0.5
0.1
80
–8.4
80
40
5
54
–7.68
–7.6
Ripple rejection ratio
RR
V
0.8
Minimum input/output voltage difference
mA
200
Output short circuit current
– 0.6
7
Output voltage temperature coefficient
Unit
VI=–11 to –23V, IO=1 to 70mA
VI=–10 to –24V, Tj=25˚C
IO=1 to 100mA, Tj=25˚C
IO=1 to 40mA, Tj=25˚C
VI=–11 to –21V, Tj=25˚C
VI=–11 to –23V, Tj=25˚C
IO=1 to 40mA, Tj=25˚C
f=10Hz to 100kHz, Ta=25˚C
VI=–11 to –21V, f=120Hz, Ta=25˚C
Tj=25˚C
IO (Short)
VI=–35V, Tj=25˚C
IO=5mA
Tj=25˚C
µV
Tj=25˚C
∆I
bias (IN)
∆I
bias (L)
VDIF (min.)
mV/˚C
∆V
O/Ta
Note 1) The specified condition Tj=25˚C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) When not specified, VI=–9V, IO=40mA, CI=2
µF, C
O=1
µF, T
j=0 to 125˚C (AN79L04)
and Tj=0 to 100˚C (AN79L04)
· AN79L08/AN79L08M (–8V Type)


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