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AN7900T Datasheet(PDF) 3 Page - Panasonic Semiconductor

Part No. AN7900T
Description  3-pin Negative Output Voltage Regulators 1A Type
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

AN7900T Datasheet(HTML) 3 Page - Panasonic Semiconductor

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3
VO
–6.25
V
–6
VO
V
REGIN
120
mV
4
mV
REGL
mV
10
mV
mA
2
1.5
Ibias
mA
mA
44
Vno
dB
1.3
0.5
60
–6.3
120
60
4
60
–5.75
–5.7
RR
V
1.1
A
2.1
3
73
– 0.5
typ
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum i/o voltage difference
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
max
Unit
VI
=–8 to –21V,
IO
=5mA to 1A, P
D
*
VI
=–8 to –25V, T
j
=25˚C
IO
=5mA to 1.5A, T
j
=25˚C
IO
=250 to 750mA, T
j
=25˚C
VI
=–9 to –13V, T
j
=25˚C
Tj
=25˚C
VI
=–8 to –25V, T
j
=25˚C
µV
IO
=5mA to 1A, T
j
=25˚C
f
=10Hz to 100kHz, Ta=25˚C
VI
=–9 to –19V, I
O
=100mA, f=120Hz
IO
=1A, T
j
=25˚C
Tj
=25˚C
IO
=5mA, T
j
=0 to 125˚C
Tj
=25˚C
∆I
bias (IN)
∆I
bias (L)
VDIF (min.)
IO (Peak)
mV/˚C
∆V
O/Ta
Note 1) The specified condition Tj
=25˚C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, VI
=–11V, I
O
=500mA, C
I
=2µF, C
O
=1µF, T
j
=0 to 125˚C
* AN7900T series : 15W, AN7900F series : 10.25W
s Electrical Characteristics (Ta
=25˚C) (continued)
• AN7906T/AN7906F (–6V Type)
<
=
VO
–7.3
V
–7
VO
V
REGIN
140
mV
5
mV
REGL
mV
12
mV
mA
2
1.5
Ibias
mA
mA
48
Vno
dB
1.3
0.5
70
–7.35
140
70
4
58
–6.7
–6.65
RR
V
1.1
A
2.1
4
72
– 0.5
typ
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
max
Unit
VI
=–79 to –22V,
IO
=5mA to 1A, P
D
*
VI
=–9 to –25V, T
j
=25˚C
IO
=5mA to 1.5A, T
j
=25˚C
IO
=250 to 750mA, T
j
=25˚C
VI
=–10 to –14V, T
j
=25˚C
Tj
=25˚C
VI
=–9 to –25V, T
j
=25˚C
µV
IO
=5mA to 1A, T
j
=25˚C
f
=10Hz to 100kHz, Ta=25˚C
VI
=–10 to –20V, I
O
=100mA, f=120Hz
IO
=1A, T
j
=25˚C
Tj
=25˚C
IO
=5mA, T
j
=0 to 125˚C
Tj
=25˚C
∆I
bias (IN)
∆I
bias (L)
VDIF (min.)
IO (Peak)
mV/˚C
∆V
O/Ta
Note 1) The specified condition Tj
=25˚C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, VI
=–12V, I
O
=500mA, C
I
=2µF, C
O
=1µF, T
j
=0 to 125˚C
* AN7900T series : 15W, AN7900F series : 10.25W
• AN7907T/AN7907F (–7V Type)
<
=


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