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AN78N00 Datasheet(PDF) 6 Page - Panasonic Semiconductor |
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AN78N00 Datasheet(HTML) 6 Page - Panasonic Semiconductor |
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VO 12.5 V 12 VO V REGIN 100 mV 15 mV REGL mV 25 mV mA 2.8 10 Ibias mA mA 80 Vno dB 0.8 0.5 50 12.6 240 120 5 55 11.5 11.4 RR V 2 mA 300 mA 500 10 67 – 0.6 Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias current fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Output short circuit current Peak output current Output voltage temperature coefficient Parameter Symbol Condition min typ max Unit VI=14.5 to 27V, IO=5 to 200mA VI=14.5 to 30V, Tj=25˚C IO=1 to 300mA, Tj=25˚C IO=5 to 200mA, Tj=25˚C VI=16 to 27V, Tj=25˚C Tj=25˚C VI=14.5 to 30V, Tj=25˚C IO=1 to 300mA, Tj=25˚C f=10Hz to 100kHz VI=15 to 25V, IO=50mA, f=120Hz IO=300mA, Tj=25˚C VI=35V, Tj=25˚C Tj=25˚C IO=5mA, Tj=0 to 125˚C Tj=25˚C ∆I bias (IN) ∆I bias (L) µV VDIF (min.) IO (Short) IO (Peak) mV/˚C ∆V O/Ta Note 1) The specified condition Tj=25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) When not specified, VI=19V, IO=100mA, CI=0.33 µF, C O=0.1 µF, T j=0 to 125˚C s Electrical Characteristics (Ta=25˚C) · AN78N12 (12V Type) VO 15.6 V 15 VO V REGIN 100 mV 16 mV REGL mV 25 mV mA 2.8 11 Ibias mA mA 80 dB 0.8 0.5 50 15.75 300 150 5 54 14.4 14.25 V 2 mA 300 mA 500 10 66 – 0.8 Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias current fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Output short circuit current Peak output current Output voltage temperature coefficient Parameter Symbol Condition min typ max Unit VI=17.5 to 20V, IO=5 to 200mA VI=17.5 to 25V, Tj=25˚C IO=1 to 300mA, Tj=25˚C IO=5 to 200mA, Tj=25˚C VI=20 to 30V, Tj=25˚C Tj=25˚C VI=17.5 to 30V, Tj=25˚C IO=1 to 300mA, Tj=25˚C f=10Hz to 100kHz VI=18.5 to 28.5V, IO=50mA, f=120Hz IO=300mA, Tj=25˚C VI=35V, Tj=25˚C Tj=25˚C IO=5mA, Tj=0 to 125˚C Tj=25˚C ∆I bias (IN) ∆I bias (L) µV VDIF (min.) IO (Short) IO (Peak) mV/˚C ∆V O/Ta Note 1) The specified condition Tj=25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) When not specified, VI=23V, IO=100mA, CI=0.33 µF, C O=0.1 µF, T j=0 to 125˚C · AN78N15 (15V Type) Vno RR |
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