Semiconductor

MSC2343657D-xxBS10/DS10

4,194,304-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO

This version:

Mar. 8. 1999

DESCRIPTION

The MSC2343657D-xxBS10/DS10 is a fully decoded, 4,194,304-word x 36-bit CMOS dynamic random access

memory module composed of eight 16Mb DRAMs (4Mx4) in SOJ packages and two 8Mb DRAMs (4Mx2) in SOJ

packages mounted with ten decoupling capacitors on a 72-pin glass epoxy single in-line package. This module

supports any application where high density and large capacity of storage memory are required.

FEATURES

· 4,194,304-word x 36-bit organization

· 72-pin Single In-Line Memory Module

MSC2343657D-xxBS10 : Gold tab

MSC2343657D-xxDS10 : Solder tab

· Single +5V supply ± 10% tolerance

· Input

: TTL compatible

· Output

: TTL compatible, 3-state

· Refresh

: 2048cycles/32ms

· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability

· Fast page mode with EDO capability

· Multi-bit test mode capability

PRODUCT FAMILY

Access Time (Max.)

Power Dissipation

Family

Cycle

Time

(Min.)

Operating (Max.)

Standby (Max.)

MSC2343657D-60BS10/DS10

60ns

30ns

15ns

110ns

5720mW

MSC2343657D-70BS10/DS10

70ns

35ns

20ns

130ns

5225mW

55mW