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LM2451TB Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LM2451TB Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 12 page Theory of Operation The LM2451 is a high voltage monolithic three channel CRT driver suitable for DTV applications. The LM2451 operates with 220V and 12V power supplies. The part is housed in a 15-lead TO-247 molded plastic power package with thin leads for improved metal-to-metal spacing. The circuit diagram of the LM2451 is shown in Figure 2. The PNP emitter follower, Q5, provides input buffering. Q1 and Q2 form a fixed gain cascode amplifier with resistors R1 and R2 setting the gain at −54. An additional cascode amplifier is formed by Q7 and Q2. Gain of this stage is set to — 25 by resistors R1 and R10. Q8 provides the input buffering for this input. Q2 now becomes the summing point for both V IN and V DAC. Emitter followers Q3 and Q4 isolate the high output impedance of the cascode stage from the capacitance of the CRT cathode, which decreases the sensitivity of the device to load capacitance. Q6 provides biasing to the output emit- ter follower stage to reduce crossover distortion at low signal levels. Figure 3 shows a typical test circuit for evaluation of the LM2451. This circuit is designed to allow testing of the LM2451 in a 50 Ω environment without the use of an expen- sive FET probe. In this test circuit, the two 4.99 k Ω resistors form a 400:1 wideband, low capacitance probe when con- nected to a 50 Ω coaxial cable and a 50Ω load (such as a 50 Ω oscilloscope input). The input signal from the generator is AC coupled to the video inputs of the LM2451. Application Hints INTRODUCTION National Semiconductor (NSC) is committed to provide ap- plication information that assists our customers in obtaining the best performance possible from our products. The fol- lowing information is provided in order to support this com- mitment. The reader should be aware that the optimization of performance was done using a specific printed circuit board designed at NSC. Variations in performance can be realized due to physical changes in the printed circuit board and the application. Therefore, the designer should know that com- ponent value changes may be required in order to optimize performance in a given application. The values shown in this document can be used as a starting point for evaluation purposes. When working with high bandwidth circuits, good layout practices are also critical to achieving maximum per- formance. IMPORTANT INFORMATION The LM2451 performance is targeted for the HDTV market. The application circuits shown in this document to optimize performance and to protect against damage from CRT arc over are designed specifically for the LM2451. If another member of the LM245X family is used, please refer to its datasheet. POWER SUPPLY BYPASS Since the LM2451 is a wide bandwidth amplifier, proper power supply bypassing is critical for optimum performance. Improper power supply bypassing can result in large over- shoot, ringing or oscillation. 0.1 µF capacitors should be connected from the supply pins, V CC and VBB, to ground, as close to the LM2451 as is practical. Additionally, a 22 µF or larger electrolytic capacitor should be connected from both supply pins to ground reasonably close to the LM2451. ARC PROTECTION During normal CRT operation, internal arcing may occasion- ally occur. This fast, high voltage, high-energy pulse can damage the LM2451 output stage. The application circuit shown in Figure 13 is designed to help clamp the voltage at the output of the LM2451 to a safe level. The clamp diodes, D1 and D2, should have a fast transient response, high peak current rating, low series impedance and low shunt capaci- tance. 1SS83 or equivalent diodes are recommended. D1 and D2 should have short, low impedance connections to V CC and ground respectively. The cathode of D1 should be located very close to a separately decoupled bypass capaci- tor (C3 in Figure 13). The ground connection of D2 and the decoupling capacitor should be very close to the LM2451 ground. This will significantly reduce the high frequency voltage transients that the LM2451 would be subjected to during an arc over condition. Resistor R2 limits the arc over current that is seen by the diodes while R1 limits the current into the LM2451 as well as the voltage stress at the outputs of the device. R2 should be a 1⁄2W solid carbon type resistor. R1 can be a 1⁄4W metal or carbon film type resistor. Having large value resistors for R1 and R2 would be desirable, but this has the effect of increasing rise and fall times. Inductor L1 is critical to reduce the initial high frequency voltage levels that the LM2451 would be subjected to before the clamp diodes have a chance to became activated. The inductor will not only help protect the device but it will also help minimize rise and fall times as well as minimize EMI. For proper arc protection, it is important to not omit any of the arc protection components shown in Figure 13. NOTE: Do not use spark gaps with the LM2451 when designing DC coupled system. If a spark gap is triggered it shorts out the output of the LM2451 and will destroy the part. EFFECT OF LOAD CAPACITANCE Figure 7 shows the effect of increased load capacitance on the speed of the device. This demonstrates the importance of knowing the load capacitance in the application. Increas- ing the load capacitance from 10 pF to 20 pF adds about 14 ns to the rise time and about 18 ns to the fall time. It is very important to keep the board capacitance as low as possible to maximize the speed of the driver. EFFECT OF OFFSET Figure 8 shows the variation in rise and fall times when the black level of the device is varied from 180V to 200V DC. The rise time increases only about 3 ns as the offset is increased in voltage and the fall time decreases by about 7 ns with the same offset adjustment. 20144413 FIGURE 13. One Channel of the LM2451 with the Recommended Application Circuit www.national.com 6 |
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