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IRHY57133CMSE Datasheet(PDF) 1 Page - International Rectifier |
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IRHY57133CMSE Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 18* ID @ VGS = 12V, TC = 100°C Continuous Drain Current 12 IDM Pulsed Drain Current À 72 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 80 mJ IAR Avalanche Current À 18 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  8.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10sec) Weight 4.3(Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A RADIATION HARDENED JANSR2N7488T3 POWER MOSFET 130V, N-CHANNEL THRU-HOLE (TO-257AA) REF: MIL-PRF-19500/705 06/10/04 www.irf.com 1 TECHNOLOGY Product Summary Part Number Radiation Level R DS (on) ID QPL Part Number IRHY57133CMSE 100K Rads (Si) 0.09 Ω 18A* JANSR2N7488T3 Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Light Weight For footnotes refer to the last page T0-257AA * Current is limited by package 5 5 IRHY57133CMSE PD - 94318C |
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