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IR01D420-P2 Datasheet(PDF) 4 Page - International Rectifier

Part # IR01D420-P2
Description  HIGH VOLTAGE HALF BRIDGE
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IR01D420-P2 Datasheet(HTML) 4 Page - International Rectifier

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4
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in
figure 2.
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
ton
Turn-On Propagation Delay (see note 2)
130
200
Vs = 0V
toff
Turn-Off Propagation Delay (see note 2)
90
200
Vs = 500V
tr
Turn-On Rise Time (see note 2)
80
120
ns
tf
Turn-Off Fall Time (see note 2)
40
70
MT
Delay Matching, HS & LS Turn-On/Off
30
trr
Reverse Recovery Time (MOSFET Body Diode)
260
IF = 0.7A
Qrr
Reverse Recovery Charge (MOSFET Body Diode)
0.7
µC
di/dt
= 100 A/us
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input
voltage. This is shown as HO in figure 2.
Static Electrical Characteristics
VBIAS (VCC, VB) = 15V and TA = 25°C unless otherwise specified. The Input voltage and current levels are referenced to
COM.
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
VCCUV+
VCC Supply Undervoltage Positive Going
8.8
9.3
9.8
V
Threshold
VCCUV-
VCC Supply Undervoltage Negative Going
7.5
8.2
8.6
V
Threshold
IQCC
Quiescent VCC Supply Current
140
240
µA
IQBS
Quiescent VBS Supply Current
20
50
µA
Ios
Offset Supply Leakage Current
50
µA
VB = VS = 500V
VIH
Logic “1” Input Voltage
2.7
V
VCC = 10V to 20V
VIL
Logic “0” Input Voltage
0.8
V
VCC = 10V to 20V
IIN+
Logic “1” Input Bias Current
20
40
IIN-
Logic “0” Input Bias Current
1.0
Rds(on)
Static Drain-to-Source On-Resistance
214
2.0
Id=850mA/TJ=150
o
C
224
1.1
Id=1.1A/TJ=150
o
C
420
3.0
Id=700mA/TJ=150
o
C
VSD
Diode Forward Voltage
214/420
0.8
V
Id=700mA/TJ=150
o
C
224
0.85
Id=1.1A/TJ=150
o
C
V
V
V
CC = 10V to 20V
µA


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