 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
RIC7113L4 Datasheet(PDF) 1 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
RIC7113L4 Datasheet(HTML) 1 Page - International Rectifier |
|
|
1 / 9 page 
Features n Total dose capability to 100K Rad (Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs n Hermetically Sealed n Lightweight RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary VOFFSET 400V max. IO+/- 2A / 2A VOUT 10 - 20V ton/off (typ.) 120 & 100 ns Delay Matching(typ.) 5 ns conditions. Symbol Parameter Min. Max. Units VB High Side Floating Supply Voltage -0.5 VS + 20 VS High Side Floating Supply Offset Voltage — 400 VHO High Side Floating Output Voltage VS - 0.5 VB + 0.5 VCC Low Side Fixed Supply Voltage -0.5 20 VLO Low Side Output Voltage -0.5 VCC + 0.5 V VDD Logic Supply Voltage -0.5 VSS + 20 VSS Logic Supply Offset Voltage VCC - 20 VCC + 0.5 VIN Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 VDD + 0.5 dVs/dt Allowable Offset Supply Voltage Transient (Figure 2) — 50 V/ns PD Package Power Dissipation @ TA £ +25°C — 1.6 W RthJA Thermal Resistance, Junction to Ambient — 125 °C/W TJ Junction Temperature -55 125 TS Storage Temperature -55 150 °C TL Lead Temperature (Soldering, 10 seconds) — 300 Weight 1.3 (typical) g Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air Description The RIC7113L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono- lithic construction. Logic inputs are compatible with stan- dard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts. RIC7113L4 5/4/2000 www.irf.com 1 PD-93921 |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
