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RIC7113L4 Datasheet(PDF) 1 Page - International Rectifier

Part No. RIC7113L4
Description  RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

RIC7113L4 Datasheet(HTML) 1 Page - International Rectifier

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Features
n Total dose capability to 100K Rad (Si)
n Floating channel designed for bootstrap operation
n Fully operational to +400V
n Tolerant to negative transient voltage
n dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
n Hermetically Sealed
n Lightweight
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Product Summary
VOFFSET
400V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.)
120 & 100 ns
Delay Matching(typ.)
5 ns
conditions.
Symbol
Parameter
Min.
Max.
Units
VB
High Side Floating Supply Voltage
-0.5
VS + 20
VS
High Side Floating Supply Offset Voltage
400
VHO
High Side Floating Output Voltage
VS - 0.5
VB + 0.5
VCC
Low Side Fixed Supply Voltage
-0.5
20
VLO
Low Side Output Voltage
-0.5
VCC + 0.5
V
VDD
Logic Supply Voltage
-0.5
VSS + 20
VSS
Logic Supply Offset Voltage
VCC - 20
VCC + 0.5
VIN
Logic Input Voltage (HIN, LIN & SD)
VSS - 0.5
VDD + 0.5
dVs/dt
Allowable Offset Supply Voltage Transient (Figure 2)
50
V/ns
PD
Package Power Dissipation @ TA £ +25°C
1.6
W
RthJA
Thermal Resistance, Junction to Ambient
125
°C/W
TJ
Junction Temperature
-55
125
TS
Storage Temperature
-55
150
°C
TL
Lead Temperature (Soldering, 10 seconds)
300
Weight
1.3 (typical)
g
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute
voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
Description
The RIC7113L4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized mono-
lithic construction. Logic inputs are compatible with stan-
dard CMOS or LSTTL outputs. The output drivers feature
a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET
or IGBT in the high side configuration which operates up
to 400 volts.
RIC7113L4
5/4/2000
www.irf.com
1
PD-93921


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