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MGP19N35CL Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MGP19N35CL
Description  Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MGP19N35CL Datasheet(HTML) 2 Page - ON Semiconductor

 
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MGP19N35CL, MGB19N35CL
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.9
°C/W
Thermal Resistance, Junction to Ambient
TO−220
RθJA
62.5
D2PAK (Note 1.)
RθJA
50
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
275
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
IC = 2.0 mA
TJ = −40°C to
150°C
320
350
380
VDC
IC = 10 mA
TJ = −40°C to
150°C
330
360
380
Zero Gate Voltage Collector Current
ICES
V
300 V
TJ = 25°C
1.5
20
µADC
g
CES
VCE = 300 V,
VGE = 0 V
TJ = 150°C
15
40*
µ DC
VGE = 0 V
TJ = −40°C
0.7
1.5
Reverse Collector−Emitter Leakage Current
IECS
V
24 V
TJ = 25°C
0.35
1.0
mA
g
ECS
VCE = −24 V
TJ = 150°C
10
20*
TJ = −40°C
0.05
0.5
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
I
75 A
TJ = 25°C
25
33
50
VDC
pg
VCES(R)
IC = −75 mA
TJ = 150°C
25
36
50
DC
TJ = −40°C
25
30
50
Gate−Emitter Clamp Voltage
BVGES
IG = 5.0 mA
TJ = −40°C to
150°C
17
20
22
VDC
Gate−Emitter Leakage Current
IGES
VGE = 10 V
TJ = −40°C to
150°C
384
500
1000
µADC
Gate Resistor (Optional)
RG
TJ = −40°C to
150°C
70
Gate Emitter Resistor
RGE
TJ = −40°C to
150°C
10
20
26
kΩ
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
VGE(th)
I
10 A
TJ = 25°C
1.4
1.7
2.0
VDC
g
GE(th)
IC = 1.0 mA,
VGE = VCE
TJ = 150°C
0.75
1.1
1.4
DC
VGE = VCE
TJ = −40°C
1.6
1.9
2.1*
Threshold Temperature Coefficient
(Negative)
4.4
mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.


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