NTHS4101PT1 datasheet(2/6 Pages) ONSEMI

Part #	NTHS4101PT1

Description	Power MOSFET -20 V, 6.7 A, P-Channel ChipFET-TM

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 6 page

NTHS4101P

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 2)

Temperature Coefficient (Positive)

V(Br)DSS

VGS = 0 Vdc, ID = −250 mAdc

−20

Vdc

Gate−Body Leakage Current Zero

IGSS

VDS = 0 Vdc, VGS = "8.0 Vdc

"100

nAdc

Zero Gate Voltage Drain Current

IDSS

VDS = −16 Vdc, VGS = 0 Vdc

VDS = −16 Vdc, VGS = 0 Vdc,

TJ = 85°C

−1.0

−5.0

mAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mAdc

−0.45

−1.5

Vdc

Static Drain−to−Source On−Resistance

RDS(on)

VGS = −4.5 Vdc, ID = −4.8 Adc

VGS = −2.5 Vdc, ID = −4.2 Adc

VGS = −1.8 Vdc, ID = −1.0 Adc

21

30

42

34

40

52

m

W

Forward Transconductance

gFS

VDS = −5.0 Vdc, ID = −4.8 Adc

15

S

Diode Forward Voltage

VSD

IS = −4.8 Adc, VGS = 0 Vdc

−0.8

−1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

VDS = −16 Vdc

V

2100

pF

Output Capacitance

Coss

VGS = 0 V

f=10MHz

290

Transfer Capacitance

Crss

f = 1.0 MHz

200

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(on)

VDD = −16 Vdc

8.0

ns

Rise Time

tr

VGS = −4.5 Vdc

28

Turn−Off Delay Time

td(off)

ID = −4.5 Adc

75

Fall Time

tf

RG = 2.5 W

60

Gate Charge

Qg

VGS = −4.5 Vdc

25

35

nC

Qgs

ID = −4.5 Adc

4.0

Qgd

VDS = −16 Vdc (Note 3)

7.0

2. Pulse Test: Pulse Width = 250

ms, Duty Cycle = 2%.

3. Switching characteristics are independent of operating junction temperatures.

Similar Part No. - NTHS4101PT1

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTHS4101PT1	59Kb / 6P	Power MOSFET -20 V, 6.7 A, P-Channel ChipFET February, 2007 ??Rev. 3
	NTHS4101PT1	132Kb / 6P	Power MOSFET March, 2012 ??Rev. 4
	NTHS4101PT1G	59Kb / 6P	Power MOSFET -20 V, 6.7 A, P-Channel ChipFET February, 2007 ??Rev. 3
	NTHS4101PT1G	132Kb / 6P	Power MOSFET March, 2012 ??Rev. 4

More results

Similar Description - NTHS4101PT1

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTHS4101P	59Kb / 6P	Power MOSFET -20 V, 6.7 A, P-Channel ChipFET February, 2007 ??Rev. 3
	NTHD4102P	64Kb / 6P	Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET November, 2005 ??Rev. 5
	NTHD4401P	75Kb / 6P	Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFET November, 2005 ??Rev. 4
	NTHD5903T1	68Kb / 6P	Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET November, 2005 ??Rev. 4
	NTHC5513	89Kb / 10P	Power MOSFET 20 V, 3.9 A / ??.0 A, Complementary ChipFET-TM October, 2004 ??Rev. 4
	NTHD4102P	69Kb / 6P	Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET October, 2004 ??Rev. 4
	NTHS5445T1	206Kb / 8P	Power MOSFET P?묬hannel ChipFET-TM February, 2005 ??Rev. XXX
	NTHS4501N	65Kb / 6P	Power MOSFET 30 V, 6.7 A, Single N?묬hannel, ChipFET Package February, 2007 ??Rev. 4
	NTHS4111P	193Kb / 6P	Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFET August, 2006 ??Rev. 2
	NTHD5903T1-D	69Kb / 8P	Power MOSFET Dual P-Channel ChipFET March, 2002 ??Rev. 2

More results

NTHS4101PT1 Datasheet(PDF) 2 Page - ON Semiconductor

NTHS4101PT1 Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - NTHS4101PT1

Similar Description - NTHS4101PT1

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL