Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

2SA2118 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SA2118
Description  Power Transistors Silicon PNP epitaxial planar type
Download  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SA2118 Datasheet(HTML) 1 Page - Panasonic Semiconductor

  2SA2118 Datasheet HTML 1Page - Panasonic Semiconductor 2SA2118 Datasheet HTML 2Page - Panasonic Semiconductor 2SA2118 Datasheet HTML 3Page - Panasonic Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
Power Transistors
1
Publication date: July 2004
SJD00315AED
2SA2118
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
■ Features
• Satisfactory linearity of forward current transfer ratio h
FE
• Dielectric breakdown voltage of the package: 5 kV
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Rank
Q
P
hFE1
60 to 140
100 to 240
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−200
V
Collector-emitter voltage (Base open)
VCEO
−180
V
Emitter-base voltage (Collector open)
VEBO
−6V
Collector current
IC
−2A
Peak collector current
ICP
−3A
Collector power
PC
25
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −50 µA, IE = 0
−200
V
Collector-emitter voltage (Base open)
VCEO
IC
= −5 mA, I
B
= 0
−180
V
Emitter-base voltage (Collector open)
VEBO
IE = −500 µA, IC = 0
−6V
Base-emitter voltage
VBE
VCE = −10 V, IC = −400 mA
−1V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= −200 V, I
E
= 0
−50
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −4 V, IC = 0
−50
µA
Forward current transfer ratio
hFE1 *
VCE = −10 V, IC = −150 mA
60
240
hFE2
VCE
= −10 V, I
C
= −400 mA
50
Collector-emitter saturation voltage
VCE(sat)
IC = −500 mA, IB = −50 mA
−1V
Transition frequency
fT
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
9.9±0.3


Html Pages

1  2  3 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn