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CM100TU-24H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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CM100TU-24H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 4 page 
Sep.1998 MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE, Q G, (nC) GATE CHARGE, VGE 20 0 16 12 8 4 0 500 400 300 200 100 VCC = 400V VCC = 600V IC = 100A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 trr Irr di/dt = -200A/ µsec Tj = 25°C 102 101 100 COLLECTOR CURRENT, I C, (AMPERES) 103 100 101 102 102 101 100 td(off) td(on) tr VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 125°C tf HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) CAPACITANCE VS. VCE (TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V 101 Cies Coes Cres 1.0 1.5 2.0 2.5 3.5 3.0 4.0 101 EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 Tj = 25°C GATE-EMITTER VOLTAGE, V GE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 0 4 8 12 16 20 8 6 4 2 0 Tj = 25°C IC = 40A IC = 200A IC = 100A COLLECTOR-CURRENT, I C, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 0 40 80 120 160 4 3 2 1 0 200 VGE = 10V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE, (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 160 120 80 40 0 200 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) 02468 10 120 40 0 VGE = 20V 15 12 11 8 Tj = 25 oC 80 160 200 10 9 |
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