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MIC21LV32 Datasheet(PDF) 35 Page - Microchip Technology

Part No. MIC21LV32
Description  36V Dual Phase, Advanced COT Buck Controller Stackable for Multiphase Operation
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC21LV32 Datasheet(HTML) 35 Page - Microchip Technology

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DS20006513A-page 35
MIC21LV32
EQUATION 5-23:
The RMS current rating of the high-side power
MOSFET in each phase channel is approximated in
Equation 5-24.
EQUATION 5-24:
The maximum duty cycle of each phase channel is
calculated in Equation 5-25:
EQUATION 5-25:
The RMS current rating of the low-side power MOSFET
in each phase channel is calculated in Equation 5-26.
EQUATION 5-26:
The conduction loss of the high-side power MOSFET in
each phase channel is calculated in Equation 5-27.
EQUATION 5-27:
The conduction loss of the low-side power MOSFET in
each phase channel is calculated in Equation 5-28.
EQUATION 5-28:
The switching loss of the high-side power MOSFET in
each phase channel is estimated in Equation 5-29.
EQUATION 5-29:
The high-side MOSFET output capacitance discharge
loss can be calculated in Equation 5-30.
EQUATION 5-30:
Where:
IOUT(MAX) = Maximum Output Current
n = Total Number of Phases
ΔIL(PP) = Peak-to-Peak Inductor Current per Phase
ISWHS(PK) = ISWLS(PK) =
IOUT(MAX)
n
IL(PP)
2
+
Where:
DMAX = Maximum Duty Cycle
ISWHS(RMS) =
DMAX
×
IOUT(MAX)
n
Where:
VOUT(MAX) = Maximum Output Voltage
VIN(MAX) = Maximum Input Voltage
Eff = Efficiency of Buck Converter
DMAX =
VOUT(MAX)
Eff × VIN(MAX)
Where:
DMAX = Maximum Duty Cycle
ISWLS(RMS) =
1 – DMAX
×
IOUT(MAX)
n
Where:
RDSON(HS) = High-Side MOSFET On-Resistance
PCOND(HS) = ISWHS(RMS)2 × RDSON(HS)
Where:
RDSON(LS) = Low-Side MOSFET On-Resistance
PCOND(LS) = ISWLS(RMS)2 × RDSON(LS)
Where:
tR = High-Side MOSFET Turn-On Transition Time
tF = High-Side MOSFET Turn-Off Transition Time
QG(HS) = Switching Gate Charge of High-Side
MOSFET
QGSHS = Gate-to-Source Charge of High-Side
MOSFET
QGDHS = Gate-to-Drain Charge of High-Side MOSFET
RONDHH = High-Side Gate Driver Pull-up Resistance
RONDHL = High-Side Gate Driver Pull-Down
Resistance
RG(HS) = Gate Resistance of High-Side MOSFET
VTH(HS) = High-Side MOSFET Gate-to-Source
Threshold Voltage
PSWL(HS) = VIN(MAX) ×
IOUT(MAX)
2n
× (tR + tF) × fSW
tR = QG(HS) ×
(RONDHH + RG(HS))
VDD – VTH(HS)
tF = QG(HS) ×
(RONDHL + RG(HS))
VTH(HS)
QG(HS) = 0.5 × QGSHS + QGDHS
Where:
COSS(HS) = High-Side MOSFET Output Capacitance
PCOSS(HS) = 0.5 × COSS(HS)(VIN(MAX))2 × fSW


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