 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MIC21LV32 Datasheet(PDF) 35 Page - Microchip Technology |
|
||||||||||||||||||||||||||||||
MIC21LV32 Datasheet(HTML) 35 Page - Microchip Technology |
|
|
35 / 50 page  2021 Microchip Technology Inc. DS20006513A-page 35 MIC21LV32 EQUATION 5-23: The RMS current rating of the high-side power MOSFET in each phase channel is approximated in Equation 5-24. EQUATION 5-24: The maximum duty cycle of each phase channel is calculated in Equation 5-25: EQUATION 5-25: The RMS current rating of the low-side power MOSFET in each phase channel is calculated in Equation 5-26. EQUATION 5-26: The conduction loss of the high-side power MOSFET in each phase channel is calculated in Equation 5-27. EQUATION 5-27: The conduction loss of the low-side power MOSFET in each phase channel is calculated in Equation 5-28. EQUATION 5-28: The switching loss of the high-side power MOSFET in each phase channel is estimated in Equation 5-29. EQUATION 5-29: The high-side MOSFET output capacitance discharge loss can be calculated in Equation 5-30. EQUATION 5-30: Where: IOUT(MAX) = Maximum Output Current n = Total Number of Phases ΔIL(PP) = Peak-to-Peak Inductor Current per Phase ISWHS(PK) = ISWLS(PK) = IOUT(MAX) n IL(PP) 2 + Where: DMAX = Maximum Duty Cycle ISWHS(RMS) = DMAX × IOUT(MAX) n √ Where: VOUT(MAX) = Maximum Output Voltage VIN(MAX) = Maximum Input Voltage Eff = Efficiency of Buck Converter DMAX = VOUT(MAX) Eff × VIN(MAX) Where: DMAX = Maximum Duty Cycle ISWLS(RMS) = 1 – DMAX × IOUT(MAX) n √ Where: RDSON(HS) = High-Side MOSFET On-Resistance PCOND(HS) = ISWHS(RMS)2 × RDSON(HS) Where: RDSON(LS) = Low-Side MOSFET On-Resistance PCOND(LS) = ISWLS(RMS)2 × RDSON(LS) Where: tR = High-Side MOSFET Turn-On Transition Time tF = High-Side MOSFET Turn-Off Transition Time QG(HS) = Switching Gate Charge of High-Side MOSFET QGSHS = Gate-to-Source Charge of High-Side MOSFET QGDHS = Gate-to-Drain Charge of High-Side MOSFET RONDHH = High-Side Gate Driver Pull-up Resistance RONDHL = High-Side Gate Driver Pull-Down Resistance RG(HS) = Gate Resistance of High-Side MOSFET VTH(HS) = High-Side MOSFET Gate-to-Source Threshold Voltage PSWL(HS) = VIN(MAX) × IOUT(MAX) 2n × (tR + tF) × fSW tR = QG(HS) × (RONDHH + RG(HS)) VDD – VTH(HS) tF = QG(HS) × (RONDHL + RG(HS)) VTH(HS) QG(HS) = 0.5 × QGSHS + QGDHS Where: COSS(HS) = High-Side MOSFET Output Capacitance PCOSS(HS) = 0.5 × COSS(HS)(VIN(MAX))2 × fSW |
Similar Part No. - MIC21LV32 |
|
Similar Description - MIC21LV32 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
