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MCIMX6U4AVM08CC Datasheet(PDF) 41 Page - NXP Semiconductors |
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MCIMX6U4AVM08CC Datasheet(HTML) 41 Page - NXP Semiconductors |
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41 / 161 page  Electrical Characteristics i.MX 6Solo/6DualLite Applications Processors for Industrial Products, Rev. 9, 11/2018 NXP Semiconductors 41 4.6.4 RGMII I/O 2.5V I/O DC Electrical Parameters The RGMII interface complies with the RGMII standard version 1.3. The parameters in Table 25 are guaranteed per the operating ranges in Table 8, unless otherwise noted. Termination Voltage Vtt Vtt tracking OVDD/2 0.49 × OVDD 0.51 × OVDD V Pull-up/Pull-down Impedance Mismatch Mmpupd — -10 10 % 240 Ω unit calibration resolution Rres — — 10 Ω Keeper Circuit Resistance Rkeep — 105 165 k Ω Input current (no pull-up/down) Iin VI = 0,VI = OVDD -2.9 2.9 μA 1 Note that the JEDEC DDR3 specification (JESD79_3D) supersedes any specification in this document. 2 OVDD – I/O power supply (1.425 V–1.575 V for DDR3 and 1.283 V–1.45 V for DDR3L) 3 Vref – DDR3/DDR3L external reference voltage. 4 The single-ended signals need to be within the respective limits (Vih(dc) max, Vil(dc) min) for single-ended signals as well as the limitations for overshoot and undershoot. Table 25. RGMII I/O 1.8V and 2.5V mode DC Electrical Characteristics1 Parameters Symbol Test Conditions Min Max Unit High-level Output Voltage1 VOH Ioh= -0.1mA (DSE=001,010) Ioh= -1mA (DSE=011,100,101,110,111) OVDD-0.15 — V Low-level Output Voltage1 VOL Iol= 0.1mA (DSE=001,010) Iol= 1mA (DSE=011,100,101,110,111) —0.15 V Input Reference Voltage Vref —0.49 × OVDD 0.51 × OVDD V High-Level Input Voltage2 3 VIH —0.7 × OVDD OVDD V Low-Level Input Voltage2 3 VIL —0 0.3 × OVDD V Input Hysteresis (OVDD=1.8V) VHYS_HighVDD OVDD=1.8V 250 — mV Input Hysteresis (OVDD=2.5V) VHYS_HighVDD OVDD=2.5V 250 — mV Schmitt Trigger VT+3 4 VTH + —0.5 × OVDD — mV Schmitt Trigger VT-3 4 VTH - —— 0.5 × OVDD mV Pull-up Resistor (22 k Ω PU) RPU_22K Vin=0V — 212 μA Pull-up Resistor (22 k Ω PU) RPU_22K Vin=OVDD -— 1 μA Pull-up Resistor (47 k Ω PU) RPU_47K Vin=0V — 100 μA Pull-up Resistor (47 k Ω PU) RPU_47K Vin=OVDD — 1 μA Pull-up Resistor (100 k Ω PU) RPU_100K Vin=0V — 48 μA Pull-up Resistor (100 k Ω PU) RPU_100K Vin=OVDD — 1 μA Table 24. DDR3/DDR3L I/O DC Electrical Characteristics1 (continued) Parameters Symbol Test Conditions Min Max Unit |
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