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HY57V641620ET Datasheet(PDF) 6 Page - Hynix Semiconductor |
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HY57V641620ET Datasheet(HTML) 6 Page - Hynix Semiconductor |
6 / 13 page Rev. 1.5 / Feb. 2005 6 Synchronous DRAM Memory 64Mbit (4Mx16bit) HY57V641620E(L/S)T(P) Series BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 00 00 OP Code 0 0 CAS Latency BT Burst Length OP Code A9 Write Mode 0 Burst Read and Burst Write 1 Burst Read and Single Write Burst Type A3 Burst Type 0 Sequential 1 Interleave Burst Length A2 A1 A0 Burst Length A3 = 0 A3=1 00 0 11 00 1 22 01 0 4 4 01 1 88 10 0 Reserved Reserved 10 1 Reserved Reserved 1 10 Reserved Reserved 1 11 Full Page Reserved CAS Latency A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 1 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved |
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