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AF4901P Datasheet(PDF) 2 Page - Anachip Corp

Part No. AF4901P
Description  Dual P-Channel 30-V (D-S) Common Drain MOSFET
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Manufacturer  ANACHIP [Anachip Corp]
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AF4901P Datasheet(HTML) 2 Page - Anachip Corp

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AF4901P
Dual P-Channel 30-V (D-S) Common Drain MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Jul 16, 2004
2/3
Absolute Maximum Ratings (T
A=25ºC unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±25
V
TA=25ºC
-9.5
ID
Continuous Drain Current (Note 1)
TA=70ºC
-7.5
A
IDM
Pulsed Drain Current (Note 2)
±30
A
IS
Continuous Source Current (Diode Conduction) (Note 1)
-2.1
A
TA=25ºC
3.1
PD
Power Dissipation (Note 1)
TA=70ºC
2.6
W
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
ºC
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
RθJC
Maximum Junction-to-Case (Note 1)
t < 5 sec
40
ºC/W
RθJA
Maximum Junction-to-Ambient (Note 1)
t < 5 sec
78
ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (T
A=25ºC unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Static
V(BR)DSS
Drain-Source breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
VGS(th)
Gate-Threshold Voltage
VDS= VGS, ID=-250uA
-1
-1.6
-3
V
IGSS
Gate-Body Leakage
VDS=0V, VGS=±25V
-
-
±100
nA
VDS=-24V, VGS=0V
-
-
-1
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V,
TJ=55ºC
-
-
-5
uA
ID(on)
On-State Drain Current (Note 3)
VDS=-5V, VGS=-10V
-30
-
-
A
VGS=-10V, ID=-9.5A
-
19
21
VGS=-4.5V, ID=-7.0A
-
28
35
rDS(on)
Drain-Source On-Resistance (Note 3)
VGS=-10V, ID=-7A,
TJ=125ºC
-
26
34
mΩ
gfs
Forward Tranconductance (Note 3)
VDS=-5V, ID=-13A
-
19
-
S
VSD
Diode Forward Voltage
IS=2.1A, VGS=0V
-
-0.7
-1.2
V
Dynamic (Note 4)
Qg
Total Gate Charge
-
15
22
Qgs
Gate-Source Charge
-
4.7
-
Qgd
Gate-Drain Charge
VDS=-15V, VGS=-5V,
ID=-7A
-
4.8
-
nC
Switching
td(on)
Turn-On Delay Time
-
14
23
tr
Rise Time
-
11
20
td(off)
Turn-Off Delay Time
-
48
76
tf
Fall-Time
VDD=-15, RL=6Ω,
ID=-1A, VGEN=-10V
-
25
39
nS
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.


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