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H01N60 Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics

Part No. H01N60
Description  N-Channel Power Field Effect Transistor
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Maker  HSMC [Hi-Sincerity Mocroelectronics]
Homepage  http://www.hsmc.com.tw
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H01N60 Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics

   
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 1/5
H01N60I, H01N60J
HSMC Product Specification
H01N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
• 1A, 600V, R
DS(on)=8Ω@VGS=10V
• Low Gate Charge 15nC(Typ.)
• Low C
rss 4pF(Typ.)
• Fast Switching
• Improved d
v/dt Capability
Absolute Maximum Ratings
Symbol
Parameter
H01N60I / H01N60J
Units
V
DSS
Drain-Source Voltage
600
V
Drain Current (Continuous T
C=25
oC)
1
A
I
D
Drain Current (Continuous T
C=100
oC)
0.6
A
I
DM
Drain Current (Pulsed)
*1
4A
V
GS
Gate-Source Voltage
±30
V
E
AS
Single Pulse Avalanche Energy
(L=59mH, I
AS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C)
50
mJ
I
AR
Avalanche Current
*1
1A
E
AR
Repetitive Avalanche Energy
2.8
mJ
dv/dt
Peak Diode Recovery dv/dt
*2
4.5
V/nS
V
GS
Gate-to-Source Voltage (Continue)
±20
V
Total Power Dissipation (T
A=25
oC)
2.5
W
Total Power Dissipation (T
C=25
oC)
28
W
P
D
Derate above 25
°C
0.22
W/
°C
T
j, Tstg
Operating and Storage Temperature Range
-55 to +150
°C
T
L
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
300
°C
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: ISD≤1.1A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25
oC
H01N60 Series Pin Assignment
1
2
3
Tab
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Tab
H01N60 Series
Symbol:
G
D
S


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