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H01N60 Datasheet(PDF) 5 Page - Hi-Sincerity Mocroelectronics

Part No. H01N60
Description  N-Channel Power Field Effect Transistor
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Maker  HSMC [Hi-Sincerity Mocroelectronics]
Homepage  http://www.hsmc.com.tw
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H01N60 Datasheet(HTML) 5 Page - Hi-Sincerity Mocroelectronics

   
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 5/5
H01N60I, H01N60J
HSMC Product Specification
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (T
L to TP)<3
oC/sec
<3
oC/sec
Preheat
- Temperature Min (Ts
min)
- Temperature Max (Ts
max)
- Time (min to max) (ts)
100
oC
150
oC
60~120 sec
150
oC
200
oC
60~180 sec
Tsmax to T
L
- Ramp-up Rate
<3
oC/sec
<3
oC/sec
Time maintained above:
- Temperature (T
L)
- Time (t
L)
183
oC
60~150 sec
217
oC
60~150 sec
Peak Temperature (T
P)
240
oC +0/-5oC
260
oC +0/-5oC
Time within 5
oC of actual Peak
Temperature (t
P)
10~30 sec
20~40 sec
Ramp-down Rate
<6
oC/sec
<6
oC/sec
Time 25
oC to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
oC
±5oC
5sec
±1sec
Pb-Free devices.
260
oC +0/-5oC
5sec
±1sec
Figure 1: Temperature profile
tP
tL
Ramp-down
Ramp-up
Tsmax
Tsmin
Critical Zone
TL to TP
tS
Preheat
TL
TP
25
t 25oC to Peak
Time


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