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SRAM
AS5C4009LL
Austin Semiconductor, Inc.
AS5C4009LL
Rev. 4.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC < T
A < 125
oC; Vcc = 5V +10%)
CAPACITANCE
PARAMETER
SYMBOL
MAXIMUM
UNITS
NOTES
Input Capacitance
VIN=0V
CIN
8pF
4
Input/Output Capactiance
VIO=0V
CIO
10
pF
4
TA = 25
oC, f = 1MHz
VCC = 5V
CONDITIONS
SYM
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNITS NOTES
READ Cycle
READ cycle Time
t RC
55
70
85
100
ns
Address access time
t AA
55
70
85
100
ns
Chip Enable access time
t ACE
55
70
85
100
ns
Output hold from address change
t OH
10
10
10
10
ns
Chip Enable to output in Low-Z
t LZCE
10
10
10
10
ns
4,6
Chip disable to output in High-Z
t HZCE
20
25
30
30
ns
4,6
Chip Enable to power-up time
t PU
0000ns
4
Chip disable to power-down time
t PD
55
70
85
100
ns
4
Output Enable access time
t AOE
30
35
40
45
ns
Output Enable to output in Low-Z
t LZOE
5555ns
4,6
Output disable to output in High-Z
t HZOE
20
25
30
30
ns
4,6
WRITE Cycle
WRITE cycle time
t WC
55
70
85
100
ns
Chip Enable to end of write
t CW
50
60
70
80
ns
Address valid to end of write
t AW
50
60
70
80
ns
Address setup time
t AS
0000ns
Address hold from end of write
t AH
0000ns
WRITE pulse width
t WP1
50
60
70
80
ns
Data setup time
t DS
30
30
35
40
ns
Data hold time
t DH
0000ns
Write disable to output in Low-Z
t LZWE
5555ns
4,6
Write Enable to output in High-Z
t HZWE
25
25
30
30
ns
4,6
-100
DESCRIPTION
-55
-70
-85
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