Preliminary

PLL103-03

DDR SDRAM Buffer with 4 DDR or 3 SDR/2 DDR DIMMS

47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991

Rev 08/28/00 Page 5

ELECTRICAL SPECIFICATIONS

1. Absolute Maximum Ratings

PARAMETERS

SYMBOL

MIN.

MAX.

UNITS

Supply Voltage

7.0

V

Input Voltage, dc

V

Output Voltage, dc

V

Storage Temperature

-65

150

°C

Ambient Operating Temperature

0

70

°C

ESD Voltage

2

KV

Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the

device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other

conditions above the operational limits noted in this specification is not implied.

2. Operating Conditions

PARAMETERS

SYMBOL

MIN.

MAX.

UNITS

Supply Voltage

3.135

3.465

V

Supply Voltage

2.375

2.625

V

Input Capacitance

5

pF

Output Capacitance

6

pF

3. Electrical Specifications

PARAMETERS

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Input High Voltage

All Inputs except I2C

2.0

V

Input Low Voltage

All inputs except I2C

0.8

V

Input High Current

TBM

uA

Input Low Current

TBM

uA

Output High

Voltage

IOL = -12mA,

VDD = 2.375V

1.7

V

Output Low

Voltage

IOL = 12mA,

VDD = 2.375V

0.6

V

Output High

Current

VDD = 2.375V, VOUT=1V

-18

-32

mA

Output Low

Current

VDD = 2.375V, VOUT=1.2V

26

35

mA

Note: TBM: To be measured