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AS4C14400-50JC Datasheet(PDF) 5 Page - Alliance Semiconductor Corporation

Part # AS4C14400-50JC
Description  1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C14400-50JC Datasheet(HTML) 5 Page - Alliance Semiconductor Corporation

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AS4C14400
5
Write cycle
Shaded areas contain advance information.
Read-modify-write cycle
Shaded areas contain advance information.
Symbol
Parameter
-40
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tASC
Column address setup time
0
0
–0
0
ns
tCAH
Column address hold time
8
10
–10
15
ns
tAWR
Column address hold time to RAS
30
40
–45
55
ns
tWCS
Write command setup time
0
0
–0
0
ns
11
tWCH
Write command hold time
5
10
–10
15
ns
11
tWCR
Write command hold time to RAS
30
40
–45
55
ns
tWP
Write command pulse width
8
10
–10
15
ns
tRWL
Write command to RAS lead time
10
13
–15
18
ns
tCWL
Write command to CAS lead time
10
13
–15
18
ns
tDS
Data-In setup time
0
0
–0
0
ns
12
tDH
Data-In hold time
8
10
–10
15
ns
12
tDHR
Data-In hold time to RAS
30
40
–45
55
ns
Symbol
Parameter
-40
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tRWC
Read-write cycle time
105
131
155
181
ns
tRWD
RAS to WE delay time
60
73
–85
98
ns
11
tCWD
CAS to WE delay time
30
36
–40
46
ns
11
tAWD
Column address to WE delay time
40
48
–55
63
ns
11
tRSH(W)
CAS to RAS hold time (write)
10
13
–15
18
ns
tCAS(W)
CAS pulse width (write)
10
13
–15
18
ns


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