SI6969BDQ datasheet(2/5 Pages) VISHAY

Part #	SI6969BDQ

Description	Dual P-Channel 1.8-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si6969BDQ

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72017

S-22051—Rev. B, 18-Nov-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

-0.45

-0.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = -9.6 V, VGS = 0 V

-1

m

Zero Gate Voltage Drain Current

IDSS

VDS = -9.6 V, VGS = 0 V, TJ = 70_C

-25

mA

On-State Drain Currenta

ID(on)

VDS -8 V, VGS = -4.5 V

-30

A

VGS = -4.5 V, ID = -4.6 A

0.024

0.030

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -3.8 A

0.031

0.040

W

DS(on)

VGS = -1.8 V, ID = -3.0 A

0.044

0.055

Forward Transconductancea

gfs

VDS = -8 V, ID = -4.6 A

18

S

Diode Forward Voltagea

VSD

IS = -1.25 A, VGS = 0 V

-0.68

-1.1

V

Dynamicb

Total Gate Charge

Qg

16.5

25

Gate-Source Charge

Qgs

VDS = -6 V, VGS = -4.5 V, ID = -4.6 A

2

nC

Gate-Drain Charge

Qgd

4.7

Turn-On Delay Time

td(on)

20

40

Rise Time

tr

VDD = -6 V, RL = 6 W

35

60

Turn-Off Delay Time

td(off)

VDD = -6 V, RL = 6 W

ID ^ -1.0 A, VGEN = -4.5 V, RG = 6 W

110

180

ns

Fall Time

tf

90

150

Source-Drain Reverse Recovery Time

trr

IF = -1.25 A, di/dt = 100 A/ms

100

200

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

0

6

12

18

24

30

0

1234

5

VGS = 5 thru 2.5 V

TC = -55_C

125

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

1.5 V

2 V

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