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SI6969BDQ Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI6969BDQ Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si6969BDQ Vishay Siliconix New Product www.vishay.com 2 Document Number: 72017 S-22051—Rev. B, 18-Nov-02 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA -0.45 -0.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA VDS = -9.6 V, VGS = 0 V -1 m Zero Gate Voltage Drain Current IDSS VDS = -9.6 V, VGS = 0 V, TJ = 70_C -25 mA On-State Drain Currenta ID(on) VDS -8 V, VGS = -4.5 V -30 A VGS = -4.5 V, ID = -4.6 A 0.024 0.030 Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -3.8 A 0.031 0.040 W DS(on) VGS = -1.8 V, ID = -3.0 A 0.044 0.055 Forward Transconductancea gfs VDS = -8 V, ID = -4.6 A 18 S Diode Forward Voltagea VSD IS = -1.25 A, VGS = 0 V -0.68 -1.1 V Dynamicb Total Gate Charge Qg 16.5 25 Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V, ID = -4.6 A 2 nC Gate-Drain Charge Qgd 4.7 Turn-On Delay Time td(on) 20 40 Rise Time tr VDD = -6 V, RL = 6 W 35 60 Turn-Off Delay Time td(off) VDD = -6 V, RL = 6 W ID ^ -1.0 A, VGEN = -4.5 V, RG = 6 W 110 180 ns Fall Time tf 90 150 Source-Drain Reverse Recovery Time trr IF = -1.25 A, di/dt = 100 A/ms 100 200 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 0 6 12 18 24 30 0 1234 5 VGS = 5 thru 2.5 V TC = -55_C 125 _C 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 1.5 V 2 V |
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