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IS61LV12816L Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part No. IS61LV12816L
Description  128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61LV12816L Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc

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IS61LV12816L
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. F
10/27/05
ISSI®
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
-10 ns
Symbol
Parameter
Test Conditions
Min. Max.
Min. Max.
Unit
ICC
VDD Operating
VDD = Max.,
CE = VIL
Com.
65
60
mA
Supply Current
IOUT = 0 mA, f = Max.
Ind.
70
65
typ.(2)
—50
50
ISB1
TTL Standby
VDD = Max.,
Com.
30
25
mA
Current
VIN = VIH or VIL
Ind.
35
30
(TTL Inputs)
CE
≥ VIH, f = max
ISB2
CMOS Standby
VDD = Max.,
Com.
3
3
mA
Current
CE
≥ VDD – 0.2V,
Ind.
4
4
mA
(CMOS Inputs)
VIN
≥ VDD – 0.2V, or
typ.(2)
700
700
µA
VIN
≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=3.3V, TA=25oC. Not 100% tested.
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.


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