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IS61LV12816L Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc |
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IS61LV12816L Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc |
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5 / 16 page 
IS61LV12816L Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5 Rev. F 10/27/05 ISSI® POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -8 ns -10 ns Symbol Parameter Test Conditions Min. Max. Min. Max. Unit ICC VDD Operating VDD = Max., CE = VIL Com. — 65 — 60 mA Supply Current IOUT = 0 mA, f = Max. Ind. — 70 — 65 typ.(2) —50 — 50 ISB1 TTL Standby VDD = Max., Com. — 30 — 25 mA Current VIN = VIH or VIL Ind. — 35 — 30 (TTL Inputs) CE ≥ VIH, f = max ISB2 CMOS Standby VDD = Max., Com. — 3 — 3 mA Current CE ≥ VDD – 0.2V, Ind. — 4 — 4 mA (CMOS Inputs) VIN ≥ VDD – 0.2V, or typ.(2) — 700 — 700 µA VIN ≤ 0.2V, f = 0 Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD=3.3V, TA=25oC. Not 100% tested. CAPACITANCE(1) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF COUT Input/Output Capacitance VOUT = 0V 8 pF Note: 1. Tested initially and after any design or process changes that may affect these parameters. |
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