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IS61LV12816L Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part No. IS61LV12816L
Description  128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61LV12816L Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

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IS61LV12816L
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
ISSI®
OPERATING RANGE
Range
Ambient Temperature
VDD (8 nS)VDD (10 nS)
Commercial
0°C to +70°C
3.3V + 10%, -5%
3.3V + 10%
Industrial
–40°C to +85°C
3.3V + 10%, -5%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage(1)
2VDD + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND
≤ VIN ≤ VDD
–1
1
µA
ILO
Output Leakage
GND
≤ VOUT ≤ VDD, Outputs Disabled
–1
1
µA
Note:
1.
VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VDD
Power Supply Voltage Relative to GND
–0.5 to 4.0V
V
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD + 0.5
V
TSTG
Storage Temperature
–65 to + 150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.


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