Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

UNR31A1 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. UNR31A1
Description  Silicon PNP epitaxial planar transistor
Download  3 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
Logo 

UNR31A1 Datasheet(HTML) 1 Page - Panasonic Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
1
Publication date: April 2003
SJH00084AED
Transistors with built-in Resistor
UNR31A1
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Internal Connection
Marking Symbol: CE
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
V
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= −50 V, I
E
= 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.5
mA
Forward current transfer ratio
hFE
VCE
= −10 V, I
C
= −5 mA
35
Collector-emitter saturation voltage
VCE(sat)
IC = −10 mA, IB = − 0.3 mA
− 0.25
V
Output voltage high-level
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9
V
Output voltage low-level
VOL
VCC
= −5 V, V
B
= −2.5 V, R
L
= 1 kΩ− 0.2
V
Input resistance
R1
−30%
10
+30%
k
Resistance ratio
R1 / R2
0.8
1.0
1.2
Transition frequency
fT
VCB
= −10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
■ Electrical Characteristics T
a
= 25°C ± 3°C
0.33
(0.40)
(0.40)
12
3
5
°
0.80±0.05
1.20±0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02
B
R1 (10 kΩ)
R2
(10 k
Ω)
E
C
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Collector current
IC
−80
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.


Html Pages

1  2  3 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn