HGT1Y40N60B3D datasheet(4/9 Pages) FAIRCHILD

Part #	HGT1Y40N60B3D

Description	70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGTG40N60B3 Rev. B

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE

FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

Typical Performance Curves (Unless Otherwise Specified) (Continued)

10

ICE, COLLECTOR TO EMITTER CURRENT (A)

10

20

40

60

100

1

100

TC

VGE

110oC

10V

110oC15V

10V

75oC

15V

75oC

fMAX1 =0.05 / (td(OFF)I +td(ON)I)

RØJC =0.43

oC/W, SEE NOTES

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

fMAX2 =(PD -PC)/ (EON +EOFF)

TJ =150

oC, R

G =3Ω, L = 100µH, V CE = 480V

80

VGE , GATE TO EMITTER VOLTAGE (V)

10

11

12

13

14

15

4

6

8

10

14

16

12

18

200

300

400

500

600

700

800

900

tSC

ISC

VCE = 360V, RG =3Ω,TJ =125

oC

PULSE DURATION = 250

µs

DUTY CYCLE <0.5%, VGE = 10V

TC =-55

oC

TC = 150

oC

TC =25

oC

0

123

45

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

0

50

100

150

200

DUTY CYCLE <0.5%, VGE = 15V

PULSE DURATION = 250

µs

TC = 150

oC

TC =-55

oC

TC =25

oC

01

234

VCE , COLLECTOR TO EMITTER VOLTAGE (V)

0

50

100

150

200

20

12

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

16

8

4

0

80

60

40

20

RG =3Ω,L =100µH, VCE = 480V

TJ = 150

oC, V

GE =15V

TJ =25

oC, V

GE = 15V

TJ =150

oC, V

GE =10V

TJ =25

oC, V

GE =10V

ICE, COLLECTOR TO EMITTER CURRENT (A)

100

2

4

6

8

0

80

60

40

20

RG =3Ω,L =100µH, VCE = 480V

TJ =150

oC; V

GE = 10V AND 15V

TJ =25

oC; V

GE = 10V AND 15V

HGT1Y40N60B3D

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