CMT09N20
POWER MOSFET
2002/09/17
Preliminary
Champion Microelectronic Corporation
Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT09N20
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
V(BR)DSS
200
V
Drain-Source Leakage Current
(VDS = 200V, VGS = 0 V)
(VDS = 160V, VGS = 0 V, TJ = 125℃)
IDSS
25
250
μ
A
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
IGSSR
-100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.4A) (Note 4)
RDS(on)
0.40
Ω
Forward Transconductance (VDS = 50V, ID = 5.4 A) (Note 4)
gFS
3.8
mhos
Input Capacitance
Ciss
800
pF
Output Capacitance
Coss
240
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
76
pF
Turn-On Delay Time
td(on)
9.4
ns
Rise Time
tr
28
ns
Turn-Off Delay Time
td(off)
39
ns
Fall Time
(VDD = 100 V, ID = 5.9 A,
RG = 12Ω, RD = 16Ω) (Note 4)
tf
20
ns
Total Gate Charge
Qg
43
nC
Gate-Source Charge
Qgs
7.0
nC
Gate-Drain Charge
(VDS = 160V, ID = 5.9A
VGS = 10 V) (Note 4)
Qgd
23
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Qrr
1.1
2.2
µC
Forward Turn-On Time
ton
**
Reverse Recovery Time
IF = 5.9A, di/dt = 100A/µs , TJ = 25℃
(Note 4)
trr
170
340
ns
Diode Forward Voltage
IS = 9.0A, VGS = 0 V, TJ = 25℃ (Note 4)
VSD
1.5
V
Note
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 100V, VGS = 10V , starting TJ = 25℃, L=1.38mH, RG = 25Ω, IAS = 9.0A
(3) ISD ≦ 9.0A, di/dt ≦ 120A/µs, VDD ≦ V(BR)DSS, TJ ≦ 150℃
(4) Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
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