RN1967~RN1969

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1967,RN1968,RN1969

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in US6 (ultra super mini type 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2967~RN2969

Equivalent Circuit and Bias Resistor Values

°°°°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN1967~1969

50

V

Collector-emitter voltage

RN1967~1969

50

V

RN1967

6

RN1968

7

Emitter-base voltage

RN1969

15

V

Collector current

RN1967~1969

100

mA

Collector power dissipation

RN1967~1969

200

mW

Junction temperature

RN1967~1969

150

°C

Storage temperature range

RN1967~1969

−55~150

°C

*: Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-2J1B

Weight: 6.8mg

Type No.

R1 (kΩ)R2 (kΩ)

RN1967

10

47

RN1968

22

47

RN1969

47

22

Unit:mm