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1N4151W-V-GS18 Datasheet(PDF) 3 Page - Vishay Siliconix |
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1N4151W-V-GS18 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 6 page 1N4151W-V Document Number 85721 Rev. 1.2, 06-Apr-05 Vishay Semiconductors www.vishay.com 3 Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 1. Forward Current vs. Forward Voltage Figure 2. Dynamic Forward Resistance vs. Forward Current Figure 3. Admissible Power Dissipation vs. Ambient Temperature 18742 1000 100 10 1 0.1 0.01 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.2 V - Forward Voltage(V) = 100 °C Tj 25 °C F 18662 1 10 100 1000 10000 110 0.1 0.01 100 IF - Forward Current ( mA ) =25 °C Tj f=1kHz 200 18743 Tamb - Ambient Temperature ( °C) 1000 800 600 400 200 20 40 60 80 100 120 140 160180 0 0 Figure 4. Relative Capacitance vs. Reverse Voltage Figure 5. Leakage Current vs. Junction Temperature 18664 2468 0 1.1 1.0 0.9 0.8 0.7 10 VR - Reverse Voltage(V) =25 °C Tj f=1MHz 1 18744 10 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature ( ° C) =50V VR |
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