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HSB88WK Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. HSB88WK
Description  SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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HSB88WK Datasheet(HTML) 2 Page - Hitachi Semiconductor

   
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HSB88WK
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
10
V
Average rectified current
I
O*
1
15
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note
: Per one device.
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
350
420
mV
I
F = 1 mA
V
F2
500
580
I
F = 10 mA
Reverse current
I
R1
0.2
µAV
R = 2V
I
R2
——10
V
R = 10V
Capacitance
C
0.80
pF
V
R = 0V, f = 1 MHz
Capacitance deviation
∆C
0.10
pF
V
R = 0V, f = 1 MHz
Forward voltage deviation
∆V
F
——10
mV
I
F = 10 mA
ESD-Capability *
1
30
V
C = 200 pF, R = 0
Ω, Both forward and
reverse direction 1 pulse.
Note
: Failure criterion ; IR > 0.4µA at VR = 2 V


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