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MICROFC-SMA-10035-GEVB Datasheet(PDF) 4 Page - ON Semiconductor

Part No. MICROFC-SMA-10035-GEVB
Description  Silicon Photomultipliers (SiPM), Low-Noise, Blue-Sensitive
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MICROFC-SMA-10035-GEVB Datasheet(HTML) 4 Page - ON Semiconductor

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C−Series SiPM Sensors
www.onsemi.com
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Table 1. PERFORMANCE PARAMETERS (continued)
Sensor
Size
Units
Max.
Typ.
Min.
Overvoltage
Parameter (Note 1)
Microcell Size
3mm
20m
Capacitance (Note 9)
(fast terminal to cathode)
Vbr + 2.5 V
20
pF
35m
12
pF
50m
7
pF
6mm
35m
48
pF
1mm
10m, 20m, 35m
Temperature dependence of Vbr
21.5
mV/°C
3mm
20m, 35m, 50m
6mm
35m
1mm
10m, 20m, 35m
Temperature dependence of Gain (Note 10)
−0.8
%/°C
3mm
20m, 35m, 50m
6mm
35m
1mm
10m
Crosstalk
Vbr + 2.5 V
0.6
%
20m
3
%
35m
7
%
3mm
20m
3
%
35m
7
%
50m
10
%
6mm
35m
7
%
1mm
10m
Afterpulsing
Vbr + 2.5 V
0.2
%
20m
0.2
%
35m
0.2
%
3mm
20m
0.2
%
35m
0.2
%
50m
0.6
%
6mm
35m
0.2
%
1. All measurements made at 2.5 V overvoltage and 21°C unless otherwise stated.
2. Please consult the maximum current levels on page 6 when selecting the overvoltage to apply.
3. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of √I vs V, where I is the current and
V is the bias voltage.
4. The range where PDE > 1% at Vbr + 5.0 V.
5. Note that the PDE does not contain contributions from afterpulsing or crosstalk.
6. Dark current derived from dark count data as DC × M × q × (1 + CT), where DC is dark count, M is gain, q is the charge of an electron, and
CT is cross talk.
7. Measured as time to go from 10% to 90% of the peak amplitude.
8. RC charging time constant of the microcell (t)
9. Internal capacitance of the sensor. Typically add 2−3 pF for sensor in package. Listed by unique microcell size for each part version.
10.Quoted as the percentage change per degree C from the measured value at 21°C.


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