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2SK3030 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SK3030
Description  Silicon N-Channel Power F-MOS FET
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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1
Power F-MOS FETs
unit: mm
2SK3030 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q High electrostatic breakdown voltage
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Electrical Characteristics (T
C = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)1
RDS(on)2
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Conditions
VDS = 80V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 4A
VGS = 4V, ID = 4A
VDS = 10V, ID = 4A
IDR = 8A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDD = 30V, ID = 4A
VGS = 10V, RL = 7.5Ω
min
100
1
3
typ
150
170
6
290
110
30
15
40
190
860
max
10
±10
2.5
230
260
−1.5
12.5
125
Unit
µA
µA
V
V
m
m
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
s Absolute Maximum Ratings (T
C = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VDSS
VGSS
ID
IDP
EAS*
PD
Tch
Tstg
Ratings
100
±20
±8
±16
3.2
10
1
150
−55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 0.1mH, IL = 8A, 1 pulse
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.75±0.1
123
0.93±0.1
2.3±0.1
0.5±0.1
0.5±0.1
0.1±0.05
1.0±0.1
1: Gate
2: Drain
3: Source
U Type Package
Internal Connection
G
D
S




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