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RN2611 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN2611
Description  Silicon PNP Epitaxial Type (PCT Process)
Download  6 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2611 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN2610,RN2611
2001-06-05
2
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
―
VCB = −50V, IE = 0
―
―
−100
nA
Emitter cut-off current
IEBO
―
VEB = −5V, IC = 0
―
―
−100
nA
DC current gain
hFE
―

VCE = −5V, IC = −1mA
120

―
400
―
Collector-emitter saturation voltage
VCE (sat)
―
IC = −5mA, IB = −0.25mA
―
−0.1
−0.3
V
Translation frequency
fT
―

VCE = −10V, IC = −5mA
―

200
―
MHz
Collector output capacitance
Cob
―

VCB = −10V, IE = 0, f = 1MHz
―

3
6
pF
RN2610
3.29
4.7
6.11
Input resistor
RN2611
R1
―

―

7

10
13
kΩ


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