1

Silicon Junction FETs (Small Signal)

unit: mm

2SK2751

Silicon N-Channel Junction FET

For impedance conversion in low frequency

For pyroelectric sensor

s Features

q Low noise-figure (NF)

q High gate to drain voltage V

GDO

q Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

Gate to Source cut-off voltage

Forward transfer admittance

Input capacitance (Common Source)

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Symbol

Conditions

min

1.4

−40

2.5

max

4.7

−1

−3.5

Unit

mA

nA

V

V

mS

pF

pF

pF

Note: The test method to comply with JISC7030, Field effect transistor test method.

typ

5

1

1

1: Source

JEDEC: TO-236

2: Drain

EIAJ: SC-59

3: Gate

Mini Type Package (3-pin)

Marking Symbol: HS

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65±0.15

0.65±0.15

3

1

2

0.4±0.2

0.1 to 0.3

Parameter

Gate to Drain voltage

Drain current

Gate current

Allowable power dissipation

Channel temperature

Storage temperature

Symbol

Ratings

−40

10

2

200

150

−55 to +150

Unit

V

mA

mA

mW

°C

°C