MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

1996

©

Document No. D11494EJ1V0DS00 (1st edition)

Date Published December 1996 N

Printed in Japan

DATA SHEET

DESCRIPTION

This product is N-Channel MOS Field Effect Transis-

tor designed for power management applications of

notebook computers.

FEATURES

• Super Low On-Resistance

Ω

• Built-in G-S Protection Diode

• Small and Surface Mount Package

(Power SOP8)

°°°°C, all terminals are connected)

Drain to Source Voltage

30

V

Gate to Source Voltage

±20

V

Drain Current (DC)

±10

A

Drain Current (pulse)

Notes1

±40

A

2.0

W

Channel Temperature

150

°C

Storage Temperature

−55 to

+150

°C

Notes 1.

PW

≤ 10

µs, Duty Cycle ≤ 1 %

2.

Mounted on ceramic substrate of 1200 mm

2

× 0.7 mm

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated

voltage may be applied to this device.

PACKAGE DIMENSIONS

(in millimeter)

1.27

0.12 M

6.0 ±0.3

4.4

0.40

+0.10

–0.05

0.78 MAX.

0.8

0.5 ±0.2

5.37 MAX.

0.10

14

85

1, 2, 3

4

5, 6, 7, 8

; Source

; Gate

; Drain

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain