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SUM110P04-04L Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUM110P04-04L
Description  P-Channel 40-V (D-S) 175-LC MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUM110P04-04L Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUM110P04-04L
Vishay Siliconix
www.vishay.com
2
Document Number: 72437
S-40840—Rev. B, 03-May-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−40
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1
−3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = −40 V, VGS = 0 V
−1
Zero Gate Voltage Drain Current
IDSS
VDS = −40 V, VGS = 0 V, TJ = 125_C
−50
mA
g
DSS
VDS = −40 V, VGS = 0 V, TJ = 175_C
−250
m
On-State Drain Currenta
ID(on)
VDS = −5 V, VGS = −10 V
−120
A
VGS = −10 V, ID = −30 A
0.0034
0.0042
Drain Source On State Resistancea
rDS( )
VGS = −10 V, ID = −30 A, TJ = 125_C
0.0063
W
Drain-Source On-State Resistancea
rDS(on)
VGS = −10 V, ID = −30 A, TJ = 175_C
0.0076
W
VGS = −4.5 V, ID = −20 A
0.005
0.0062
Forward Transconductancea
gfs
VDS = −15 V, ID = −30 A
20
S
Dynamicb
Input Capacitance
Ciss
11200
Output Capacitance
Coss
VGS = 0 V, VDS = −25 V, f = 1 MHz
1650
pF
Reverse Transfer Capacitance
Crss
1200
Total Gate Chargec
Qg
235
350
Gate-Source Chargec
Qgs
VDS = −20 V, VGS = −10 V, ID = −110 A
45
nC
Gate-Drain Chargec
Qgd
DS
, GS
, D
65
Gate Resistance
Rg
3
W
Turn-On Delay Timec
td(on)
25
40
Rise Timec
tr
VDD = −20 V, RL = 0.18 W
30
45
ns
Turn-Off Delay Timec
td(off)
VDD
20 V, RL 0.18 W
ID ] −110 A, VGEN = −10 V, Rg = 2.5 W
190
300
ns
Fall Timec
tf
g
110
165
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Is
−110
A
Pulsed Current
ISM
−240
A
Forward Voltagea
VSD
IF = −85 A, VGS = 0 V
−1.0
−1.5
V
Reverse Recovery Time
trr
65
100
ns
Peak Reverse Recovery Current
IRM(REC)
IF = −85 A, di/dt = 100 A/ms
−3.7
−5.6
A
Reverse Recovery Charge
Qrr
F
,
m
0.12
0.28
mC
Notes:
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.


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