TC51WKM616AXBN75 datasheet(3/11 Pages) TOSHIBA

Part #	TC51WKM616AXBN75

Description	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TC51WKM616AXBN75

2002-08-22

3/11

ABSOLUTE MAXIMUM RATINGS (See Note 1)

SYMBOL

RATING

VALUE

UNIT

VDD

Power Supply Voltage

−1.0 to 3.6

V

VDDQ

Output Buffer Power Supply Voltage

−1.0 to VDD + 0.5 (3.6 V Max)

V

VIN

Input Voltage for Address and Control Pins

−1.0 to 3.6

V

VI/O

Input/Output Voltage for I/O Pins

−1.0 to VDDQ + 0.5

V

Topr.

Operating Temperature

−25 to 85

°C

Tstrg.

Storage Temperature

−55 to 150

°C

Tsolder

Soldering Temperature (10 s)

260

°C

PD

Power Dissipation

0.6

W

IOUT

Short Circuit Output Current

50

mA

DC RECOMMENDED OPERATING CONDITIONS (Ta

= −25°C to 85°C)

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

VDD

Power Supply Voltage

2.6

2.75

3.3

VDDQ

Output Buffer Power Supply Voltage

1.7

1.8

2.2

Input High Voltage for Address and Control Pins

1.6



VDD + 0.3*

VIH

Input High Voltage for I/O Pins

1.6



VDDQ + 0.3*

VIL

Input Low Voltage

−0.3*



0.4

V

* : VIH(Max) VDD+1.0 V/ VDDQ+1.0 V with 10 ns pulse width

VIL(Min) -1.0 V with 10 ns pulse width

DC CHARACTERISTICS (Ta

= −25°C to 85°C, VDD = 2.6 to 3.3 V, VDDQ = 1.7 to 2.2 V)

(See Note 3 to 4)

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP.

MAX

UNIT

IIL

Input Leakage Current

VIN = 0 V to VDDQ

−1.0



+1.0

µA

ILO

Output Leakage Current

Output disable, VOUT = 0 V to VDD

−1.0



+1.0

µA

VOH

Output High Voltage

IOH = − 100 µA

VDDQ − 0.2



V

VOL

Output Low Voltage

IOL = 100 µA



0.2

V

IDDO1

Operating Current

CE1

= VIL

CE2

= VIH, IOUT = 0 mA

tRC = min



50

mA

IDDO2

Page Access Operating Current

CE1

= VIL, CE2 = VIH,

Page add. cycling, IOUT = 0 mA

tPC = min



25

mA

IDDS

Standby Current(MOS)

CE1

= VDD − 0.2 V, CE2 = VDD − 0.2 V



70

µA

IDDSD

Deep Power-down Standby Current

CE2

= 0.2 V



5

µA

CAPACITANCE (Ta

= 25°C, f = 1 MHz)

SYMBOL

PARAMETER

TEST CONDITION

MAX

UNIT

CIN

Input Capacitance

VIN = GND

10

pF

COUT

Output Capacitance

VOUT = GND

10

pF

Note: This parameter is sampled periodically and is not 100% tested.

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