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SMJ44C251B Datasheet(PDF) 21 Page - Texas Instruments |
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SMJ44C251B Datasheet(HTML) 21 Page - Texas Instruments |
21 / 53 page SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A – MARCH 1995 – REVISED JUNE 1995 21 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 timing requirements over recommended ranges of supply voltage and operating free-air temperature† ALT. ’44C251B - 10 ’44C251B - 12 UNIT SYMBOL MIN MAX MIN MAX UNIT tc(rd) Cycle time, read (see Note 9) tRC 190 220 ns tc( W ) Cycle time, write (see Note 9) tWC 190 220 ns tc(rdW) Cycle time, read-modify-write (see Note 9) tRMW 250 290 ns tc(P) Cycle time, page-mode read or write (see Note 9) tPC 60 70 ns tc(rdWP) Cycle time, page-mode read-modify-write (see Note 9) tPRMW 105 125 ns tc( TRD) Cycle time, read transfer (see Note 9) tRC 190 220 ns tc( TW ) Cycle time, write transfer (see Note 9) tWC 190 220 ns tc(SC) Cycle time, serial clock (see Notes 9 and 10) tSCC 30 35 ns tw(CH) Pulse duration, CAS high tCPN 20 30 ns tw(CL) Pulse duration, CAS low (see Note 11) tCAS 25 75 000 30 75 000 ns tw(RH) Pulse duration, RAS high tRP 80 90 ns tw(RL) Pulse duration, RAS low (see Note 12) tRAS 100 75 000 120 75 000 ns tw( WL) Pulse duration, W low tWP 25 25 ns tw( TRG) Pulse duration, TRG low 25 30 ns tw(SCH) Pulse duration, SC high tSC 10 12 ns tw(SCL) Pulse duration, SC low tSCP 10 12 ns tw(SEL) Pulse duration, SE low tSE 35 40 ns tw(SEH) Pulse duration, SE high tSEP 35 40 ns tw(GH) Pulse duration, TRG high tTP 30 30 ns tw(RL)P Pulse duration, RAS low (page mode) 100 75 000 120 75 000 ns tsu(CA) Setup time, column address tASC 0 0 ns tsu(SFC) Setup time, DSF before CAS low tFSC 0 0 ns tsu(RA) Setup time, row address tASR 0 0 ns tsu( WMR) Setup time, W before RAS low tWSR 0 0 ns tsu(DQR) Setup time, DQ before RAS low tMS 0 0 ns tsu( TRG) Setup time, TRG before RAS low tTHS 0 0 ns tsu(SE) Setup time, SE before RAS low (see Note 13) tESR 0 0 ns tsu(SESC) Setup time, serial write disable tSWIS 10 15 ns tsu(SFR) Setup time, DSF before RAS low tFSR 0 0 ns tsu(DCL) Setup time, data before CAS low tDSC 0 0 ns tsu(DWL) Setup time, data before W low tDSW 0 0 ns tsu(rd) Setup time, read command tRCS 0 0 ns tsu( WCL) Setup time, early write command before CAS low tWCS 0 0 ns † Timing measurements are referenced to VIL max and VIH min. NOTES: 9. All cycle times assume tt = 5 ns. 10. When the odd tap is used (tap address can be 0 – 511, and odd taps are 1, 3, 5, etc.), the cycle time for SC in the first serial data out cycle needs to be 70 ns minimum. 11. In a read-modify-write cycle, td(CLWL) and tsu( WCH) must be observed. Depending on the user’s transition times, this may require additional CAS low time [tw(CL)]. 12. In a read-modify-write cycle, td(RLWL) and tsu( WRH) must be observed. Depending on the user’s transition times, this may require additional RAS low time [tw(RL)]. 13. Register-to-memory (write) transfer cycles only |
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