NAND01G-B datasheet(22/64 Pages) STMICROELECTRONICS

Part #	NAND01G-B

Description	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Command Set

NAND01G-B, NAND02G-B

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5

Command Set

All bus write operations to the device are interpreted by the Command Interface. The

Commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when

the Command Latch Enable signal is high. Device operations are selected by writing

specific commands to the Command Register. The two-step command sequences for

program and erase operations are imposed to maximize data security.

The Commands are summarized in Table 10: Commands.

Table 10.

Commands

Command

Bus Write Operations(1)(2)

1. The bus cycles are only shown for issuing the codes. The cycles required to input the

addresses or input/output data are not shown.

2. For consecutive Read operations the 00h command does not need to be repeated.

Commands

accepted

during

busy

1st CYCLE

2nd CYCLE 3rd CYCLE 4th CYCLE

Read

00h(2)

30h

–

Random Data Output

05h

E0h

–

Cache Read

00h

31h

–

Exit Cache Read

34h

–

Yes(3)

3. Only during Cache Read busy.

Page Program

(Sequential Input default)

80h

10h

–

Random Data Input

85h

–

Copy Back Program

00h

35h

85h

10h

Cache Program

80h

15h

–

Block Erase

60h

D0h

–

Reset

FFh

–

Yes

Read Electronic Signature

90h

–

Read Status Register

70h

–

Yes

Read Block Lock Status

7Ah

–

Blocks Unlock

23h

24h

–

Blocks Lock

2Ah

–

Blocks Lock-Down

2Ch

–

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