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2SK3284 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SK3284 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SK3284 No. A0168-1/4 Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 10 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 40 A Allowable Power Dissipation PD Tc=25 °C50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 400 V Zero-Gate Voltage Drain Current IDSS VDS=320V, VGS=0V 1.0 mA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 4 V Forward Transfer Admittance yfs VDS=10V, ID=6A 2.9 5.8 S Static Drain-to-Source On-State Resistance RDS(on) ID=6A, VGS=15V 0.43 0.55 Ω Input Capacitance Ciss VDS=20V, f=1MHz 1150 pF Output Capacitance Coss VDS=20V, f=1MHz 350 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 150 pF Total Gate Charge Qg VDS=200V, VGS=10V, ID=10A 40 nC Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns Rise Time tr See specified Test Circuit. 30 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 150 ns Fall Time tf See specified Test Circuit. 50 ns Diode Forward Voltage VSD IS=10A, VGS=0V 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENA0168 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 11006QB MS IM TB-00002033 2SK3284 N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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