2SC6013 datasheet(2/4 Pages) SANYO

Part #	2SC6013

Description	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

2SC6013

No.8556-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gain-Bandwidth Product

fT

VCE=2V, IC=500mA

380

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

23

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=1.5A, IB=30mA

90

135

mV

IC=3A, IB=60mA

135

200

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1.5A, IB=30mA

0.85

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0A

15

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

15

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0A

6

V

Turn-ON Time

ton

See specified Test Circuit.

30

ns

Storage Time

tstg

See specified Test Circuit.

190

ns

Fall Time

tf

See specified Test Circuit.

15

ns

Package Dimensions

Switching Time Test Circuit

unit : mm

7007-004

VR

RB

VCC=5V

IC=20IB1= --20IB2=1.5A

VBE= --5V

+

50

Ω

INPUT

OUTPUT

RL

470

µF

100

µF

PW=20

µs

IB1

D.C.

≤1%

IB2

1.5

0.5

0.4

3.0

4.5

1.6

0.4

12

3

1.5

Top View

Bottom View

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

5

6

4

2

3

1

0

5

4

2

3

1

0

0.2

0

0.4

0.6

0.8

1.0

0.1

0.3

0.5

0.7

0.9

IT09744

10mA

15mA

20mA

40mA

IB=0mA

5mA

VCE=2V

0

0.2

0.4

0.6

0.8

1.0

1.1

0.1

0.3

0.5

0.7

0.9

IT09745

30mA

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