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STD55NH2LL Datasheet(PDF) 1 Page - STMicroelectronics |
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STD55NH2LL Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page 1/12 March 2004 STD55NH2LL N-CHANNEL 24V - 0.010 Ω - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET™ POWER MOSFET ■ TYPICAL RDS(on) = 0.01 Ω @ 10 V ■ TYPICAL RDS(on) = 0.012 Ω @ 4.5 V ■ RDS(ON) * Qg INDUSTRY’s BENCHMARK ■ CONDUCTION LOSSES REDUCED ■ SWITCHING LOSSES REDUCED ■ LOW THRESHOLD DEVICE ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") DESCRIPTION The STD55NH2LL is based on the latest generation of ST's proprietary STripFET™ technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It's therefore ideal for high-density converters in Telecom and Computer applications. APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES TYPE VDSS RDS(on) ID STD55NH2LL 24 V < 0.011 Ω 40 A(*) 3 2 1 1 3 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) Ordering Information ABSOLUTE MAXIMUM RATINGS SALES TYPE MARKING PACKAGE PACKAGING STD55NH2LLT4 STD55NH2LL-1 D55NH2LL D55NH2LL TO-252 TO-251 TAPE & REEL TUBE Symbol Parameter Value Unit Vspike(1) Drain-source Voltage Rating 30 V VDS Drain-source Voltage (VGS = 0) 24 V VDGR Drain-gate Voltage (RGS = 20 k Ω) 24 V VGS Gate- source Voltage ± 18 V ID(*) Drain Current (continuous) at TC = 25°C 40 A ID Drain Current (continuous) at TC = 100°C 28 A IDM(2) Drain Current (pulsed) 160 A Ptot Total Dissipation at TC = 25°C 60 W Derating Factor 0.4 W/°C EAS(3) Single Pulse Avalanche Energy 600 mJ Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM |
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