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K4F661612D Datasheet(PDF) 1 Page - Samsung semiconductor

Part No. K4F661612D
Description  4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4F661612D Datasheet(HTML) 1 Page - Samsung semiconductor

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CMOS DRAM
K4F661612D, K4F641612D
Industrial Temperature
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er)
are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung
′s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V
±0.3V power supply
Industrial Temperature operating ( -40~85
°C )
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
Control
Clocks
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Memory Array
4,194,304 x 16
Cells
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ8
to
DQ15
OE
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
• Part Identification
- K4F661612D-TI/P(3.3V, 8K Ref.)
- K4F641612D-TI/P(3.3V, 4K Ref.)
FEATURES
• Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
L-ver
K4F661612D*
8K
64ms
128ms
K4F641612D
4K
• Performance Range
Speed
tRAC
tCAC
tRC
tPC
-45
45ns
12ns
80ns
31ns
-50
50ns
13ns
90ns
35ns
-60
60ns
15ns
110ns
40ns
• Active Power Dissipation
Speed
8K
4K
-45
324
468
-50
288
432
-60
252
396
Unit : mW
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS -before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)


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