PWRLITE LU1004D
High Performance N-Ch Vertical POWERJFETTM with PN Diode
Features
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No “Body Diode”; extremely low Cds
Added Fast Recovery Schottky Diode in same package
Applications
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
VRM Modules
IPAK Pin Assignments
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
1 2
3
Case TO251 (IPAK)
1 2
3
Case TO251 (IPAK)
N – Channel PowerJFET
with PN Diode
S
D
G
S
D
G
Pin Definitions
Pin Number
Pin Name
Pin Function Description
Product Summary
1
Gate
Gate. Transistor Gate
VDS (V)
Rdson (
Ω)
ID (A)
2, 4
Drain
Drain. Transistor Drain
24V
0.0045
50
3
Source
Source. Transistor Source
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Units
Drain-Source Voltage
VDS
24
V
Gate-Source Voltage
VGS
-10
V
Gate-Drain Voltage
VGD
-28
V
Continuous Drain Current
ID
50
A
Pulsed Drain Current
ID
100
A
Single Pulse Drain-to-Source Avalanche Energy at 25
°C
(VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 Ω)
EAS
220
mJ
Junction Temperature
TJ
-55 to 150
°C
°C
Storage Temperature
TSTG
-65 to 150
°C
°C
Lead Soldering Temperature, 10 seconds
T
260
°C
°C
Power Dissipation (Derated at 25
°C)
PD
80
W
LU1004D- Rev 0.97 12-04
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