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LMH6505MA Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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LMH6505MA Datasheet(HTML) 1 Page - National Semiconductor (TI) |
1 / 20 page LMH6505 Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier General Description The LMH6505 is a wideband DC coupled voltage controlled gain stage followed by a high-speed current feedback op amp which can directly drive a low impedance load. The gain adjustment range is 80 dB for up to 10 MHz which is accom- plished by varying the gain control input voltage, V G. Maximum gain is set by external components, and the gain can be reduced all the way to cut-off. Power consumption is 110 mW with a speed of 150 MHz and a gain control band- width (BW) of 100 MHz. Output referred DC offset voltage is less than 55 mV over the entire gain control voltage range. Device-to-device gain matching is within ±0.5 dB at maxi- mum gain. Furthermore, gain is tested and guaranteed over a wide range. The output current feedback op amp allows high frequency large signals (Slew Rate = 1500 V/µs) and can also drive a heavy load current (60 mA) guaranteed. Near ideal input characteristics (i.e. low input bias current, low offset, low pin 3 resistance) enable the device to be easily configured as an inverting amplifier as well. To provide ease of use when working with a single supply, the V G range is set to be from 0V to +2V relative to the ground pin potential (pin 4). V G input impedance is high in order to ease drive requirement. In single supply operation, the ground pin is tied to a "virtual" half supply. The LMH6505’s gain control is linear in dB for a large portion of the total gain control range from 0 dB down to −85 dB @ 25˚C, as shown below. This makes the device suitable for AGC applications. For linear gain control applications, see the LMH6503 datasheet. The LMH6505 is available in either the SOIC-8 or the MSOP-8 package. The combination of minimal external components and small outline packages allows the LMH6505 to be used in space-constrained applications. Features V S = ±5V, TA = 25˚C, RF =1k Ω,R G = 100 Ω,R L = 100 Ω,A V =A VMAX = 9.4 V/V, Typical values unless specified. n −3 dB BW 150 MHz n Gain control BW 100 MHz n Adjustment range (<10 MHz) 80 dB n Gain matching (limit) ±0.50 dB n Supply voltage range 7V to 12V n Slew rate (inverting) 1500 V/µs n Supply current (no load) 11 mA n Linear output current ±60 mA n Output voltage swing ±2.4V n Input noise voltage 4.4 nV/ n Input noise current 2.6 pA/ n THD (20 MHz, R L = 100 Ω,V O =2VPP) −45 dBc Applications n Variable attenuator n AGC n Voltage controlled filter n Video imaging processing 20171011 Gain vs. V G Typical Application 20171002 A VMAX = 9.4 V/V January 2006 © 2006 National Semiconductor Corporation DS201710 www.national.com |
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