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2SD2254 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # 2SD2254
Description  Silicon NPN triple diffusion planar type Darlington(For power amplification)
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2254 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD2254
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1492
s Features
q
Optimum for 60W HiFi output
q
High foward current transfer ratio hFE: 5000 to 30000
q
Low collector to emitter saturation voltage VCE(sat): <2.5V
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
130
110
5
10
6
70
3.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 130V, IE = 0
VCE = 110V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 5A
IC = 5A, IB = 5mA
IC = 5A, IB = 5mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 5A, IB1 = 5mA, IB2 = –5mA,
VCC = 50V
min
110
2000
5000
typ
20
1.4
4.5
0.8
max
100
100
100
30000
2.5
3.0
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
*h
FE2 Rank classification
Rank
Q
P
hFE2
5000 to 15000 8000 to 30000
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
φ 3.3±0.2
B
E
C


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